Electronic Devices and Circuits

Unit-wise syllabus

• Review of Semiconductor Physics and Junction Diode Characteristics
  Hall effect, continuity equation, law of junction, Fermi-Dirac function, Fermi level; PN junction energy band diagram; open-circuited and biased p-n junction; Diode equation, V-I characteristics, temperature dependence; Diode resistance and diode capacitance
• Special Semiconductor Devices and Diode Circuits
  Zener diode and breakdown mechanisms; Varactor, LED, Photodiode, Tunnel diode, UJT, SCR; Diode as a circuit element; load-line concept; clippers and clampers; peak detector; comparators; Rectifiers: half-wave, full-wave, bridge; derivations; Filters: inductor, capacitor, pi-section; ripple factor comparison
• Transistor Characteristics, Biasing and Thermal Stabilization
  BJT current components; CB, CE, CC configurations; Ebers-Moll model; phototransistor; Need for biasing; operating point; load-line analysis; Biasing methods: fixed bias, collector-to-base, self bias; stability factors (S, S', S''); Bias compensation; thermal runaway and thermal stability
• Small Signal Low Frequency Transistor Amplifier Models (BJT)
  Two-port network; transistor hybrid model; determination and conversion of h-parameters; Generalized analysis of transistor amplifier using h-parameters; Analysis of CB, CE, CC amplifiers (exact and approximate); Comparison of transistor amplifiers
• FET and MOSFET
  FET types; JFET operation, characteristics, biasing; small-signal model; MOSFET structure and operation in triode and saturation regions; V-I characteristics of MOSFET; MOS transconductance; small-signal model; PMOS and NMOS transistors; comparison of bipolar and MOS devices

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